Fabrication of CdSe/Si Nanostructures Thin Films Heterojunction by DC Sputtering for Solar Cell Applications

Abstract

CdSe nanocrystalin thin films were deposited onto silicon wafer using DC plasma sputtering method. Quantification of the crystalline size of CdSe thin films has been achieved by X-ray diffraction (XRD) technique. Otical properties of prepared CdSe thin films including   absorption coefficient and optical band gap, have been analyzed and evaluated in the wavelength range of 250-850 nm. In addition, the current-voltage characteristics of a CdSe/Si hetero-junction have been examined, and the results show that lighting causes an increase in photo-current. The open circuit voltage was 2.0 V and the short circuit current was 0.18 mA. The abbreviation open circuit current is Voc.