Preparation and Investigation of TiO2, SnSx, and SnO2 Thin Film Properties for Use as UV Detectors

Abstract

Hydrothermal method was used to prepare TiO₂ films at temperatures (150,160,170,180)^oC with a holding time of 6h, and the SILAR method was used to prepare the SnS_x film. Through XRD assays, the shape of the TiO₂ compound is quaternary rutile in all samples and has a preferred growth direction towards (101), and we note that when the temperature increases, the intensity of the peaks decreases. XRD assays confirmed that the samples prepared by the SILAR method confirmed that the compound SnS_x consists of the two compounds SnS and SnS₂, as the compound SnS has a rhombic structure and the compound SnS₂ has a hexagonal shape.We note that all the manufactured FTO/TiO₂/Al, FTO/n-TiO₂/p-SnS_x/Al, FTO/n-TiO₂/p-SnO₂/Al optical reagents have a nonlinear Schottky behavior. Al-TiO₂ reagents at different temperatures have a high sensitivity of about 9900%, and the sensitivity of the detector decreases with the increase in the applied voltage, and it has a slow response, so we dope it with materials SnS_x, SnO₂. As for the TiO₂/SnS_x, TiO₂/SnO₂ reagents, we note that the highest sensitivity is 40400% for the FTO/n-TiO₂/p-SnS_x/Al detector with at a voltage of 0 V. Also, the sensitivity decreases with an increase in the applied voltage and its response is fast.